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| BAR63... Silicon PIN Diodes PIN diode for high speed switching of RF signals Very low forward resistance (low insertion loss) Very low capacitance (high isolation) For frequencies up to 3GHz 1 BAR63-02.. BAR63-03W BAR63-04 BAR63-04W 3 BAR63-05 BAR63-05W 3 BAR63-06 BAR63-06W 3 BAR63-07L4 4 3 2 D1 D2 D1 D2 D1 D2 D1 D2 1 2 1 2 1 2 1 2 Type BAR63-02L* BAR63-02V BAR63-02W BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-07L4* * preliminary data Package TSLP-2-1 SC79 SCD80 SOD323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 TSLP-4-4 Configuration single, leadless single single single series series common cathode common cathode common anode common anode parallel pair, leadless LS(nH) 0.4 0.6 0.6 1.8 1.8 1.4 1.8 1.4 1.8 1.4 0.4 Marking G G GG G G4s G4s G5s G5s G6s G6s P3s 1 Jun-27-2003 BAR63... Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation BAR63-02V, -02W, BAR63-03W, TS BAR63-04S, TS 115C 105C tbd Tj Top Tstg Symbol RthJS Symbol VR IF Ptot 118C 115C 55C Value 50 100 250 250 250 250 250 250 150 -55 ... 125 -55 ... 150 Unit V mA mW BAR63-02L, TS BAR63-04...BAR63-06, TS BAR63-04W...BAR63-06W, TS Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point1) BAR63-02L BAR63-02V, BAR63-02W BAR63-03W BAR63-04...BAR63-06 BAR63-04S BAR63-04W...BAR63-06W BAR63-07L4 1For BAR63-07L4, TS C Value 125 Unit K/W calculation of RthJA please refer to the Technical Information 2 140 155 380 180 180 tbd Jun-27-2003 BAR63... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Breakdown voltage I(BR) = 5 A Reverse current VR = 35 V Forward voltage IF = 100 mA VF 0.95 1.2 V IR 10 nA V(BR) 50 V Symbol min. Values typ. max. Unit 3 Jun-27-2003 BAR63... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Diode capacitance VR = 5 V, f = 1 MHz VR = 0 V, 100 MHz ... 1.8 GHz Reverse parallel resistance VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, I-region width Insertion loss1) IF = 1 mA, f = 1.8 GHz IF = 5 mA, f = 1.8 GHz IF = 10 mA, f = 1.8 GHz Isolation1) VR = 0 V, f = 0.9 MHz VR = 0 V, f = 1.8 MHz VR = 0 V, f = 2.45 MHz 1BAR63-02L Unit max. pF typ. CT RP rf rr 0.21 0.3 500 15 5 1.2 1 75 0.3 k 2 ns RL = 100 in series configuration, Z = 50 4 Charge carrier life time - WI |S21|2 - 4.5 -0.15 -0.11 -0.1 -17.9 -12.3 -10 - |S21|2 - Jun-27-2003 m dB BAR63... Diode capacitance CT = f = 1MHz - 1.8GHz (VR) Reverse parallel resistance RP = (VR ) f = Parameter 10 3 KOhm 100 MHz 0.5 CT pF 0.4 EHD07139 10 2 1 GHz 1.8 GHz 0.3 Rp 10 1 0.2 10 0 0.1 0 0 10 20 V VR 30 10 -1 0 5 10 15 20 V f = 100MHz TA = Parameter EHD07138 10 2 rf F 10 3 mA 10 2 BAR 63... 10 1 10 1 10 0 10 0 10 -1 10 -2 10 -1 -2 10 10 -1 10 0 10 1 mA 10 2 10 -3 0.3 0.5 F 5 Forward resistance rf = (IF ) Forward current IF = (VF) 25 C 40 C 85 C 0.8 1 Jun-27-2003 30 VR EHD07171 V VF 1.2 BAR63... Forward current IF = (TS ) Forward current IF = (TS ) BAR63-04...BAR63-06 120 BAR63-02V, BAR63-02W 120 mA mA 80 80 IF 60 IF 60 40 40 20 20 0 0 15 30 45 60 75 90 105 120 C 150 0 0 15 30 45 60 TS BAR63-03W 120 BAR63-04W...BAR63-06W 120 mA mA 80 80 IF 60 IF 60 40 40 20 20 0 0 15 30 45 60 75 90 105 120 C 150 0 0 15 30 45 60 TS 6 Forward current IF = (TS ) Forward current IF = 75 90 105 120 C 150 TS (TS ) 75 90 105 120 C 150 TS Jun-27-2003 BAR63... Permissible Puls Load RthJS = BAR63-04...BAR63-06 5 K/W (tp ) Permissible Pulse Load BAR63-04...BAR63-06 EHB07146 R thJS F max 10 F DC 5 2 10 2 5 D= 0.5 0.2 0.1 0.05 0.05 0.01 0.005 0 tP t D= P T 10 0 10 -6 10 -5 10 -4 10 -3 T 10 -2 s tP 10 0 10 1 5 10 1 5 10 0 10 -6 10 -5 BAR63-02V, BAR63-02W 10 3 10 1 K/W IFmax/ IFDC RthJS 10 2 - 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 tp 7 BAR63-02V, BAR63-02W Permissible Puls Load RthJS = (tp ) Permissible Pulse Load IFmax / IFDC = (tp ) IFmax / IFDC = (tp ) EHB07147 tP t D= P T T D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -4 10 -3 10 -2 s tP 10 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 -5 10 -4 10 -3 10 -2 s 10 0 tp Jun-27-2003 BAR63... Permissible Puls Load RthJS = BAR63-03W 10 3 (tp ) Permissible Pulse Load BAR63-03W 10 1 K/W IFmax/ IFDC RthJS 10 2 - 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 tp BAR63-04W...BAR63-06W 10 3 10 3 K/W - IFmax/ IFDC RthJS 10 2 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 tp 8 BAR63-04W...BAR63-06W Permissible Puls Load RthJS = (tp ) Permissible Pulse Load IFmax / IFDC = (tp ) -5 -5 IFmax / IFDC = (tp ) D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -4 10 -3 10 -2 s 10 0 tp D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -4 10 -3 10 -2 s 10 0 tp Jun-27-2003 BAR63... Insertion loss |S21 |2 = (f) IF = Parameter 0 VR = Paramter 0 BAR63-02L in series configuration, Z = 50 BAR63-02L in series configuration, Z = 50 dB Insertion Loss dB 5 mA 1 mA 10 mA Isolation -10 -0.2 -15 -20 -0.3 -25 -0.4 0 1 2 3 4 GHz 6 -30 0 1 2 f 9 Isolation |S21 |2 = (f) 0V 1V 10 V 3 4 GHz 6 f Jun-27-2003 |
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